Comparison of low-frequency noise characteristics of silicon homojunction and III-V heterojunction bipolar transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1994, Pages 535-538

  Kirtania, Ashish K ^a   Das, Mukunda B ^a   Chandrasekhar, S ^a   Lunardi, L M ^a   Hamm, R A ^a   Yang, L W ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; NOISE GENERATORS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

BASE CURRENT DENSITY; CURRENT GAINS; HETEROJUNCTION BIPOLAR TRANSISTORS; LOW FREQUENCY NOISE CHARACTERISTICS; MINORITY CARRIERS; POWER LAW; SILICON HOMOJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0028202020     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)