GaAs photonic crystals on SiO2 fabricated by very-high-frequency anode-coupled reactive ion etching and wafer bonding

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6259-6263

  Saitoh, Tadashi ^a   Sogawa, Tetsuomi ^a   Notomi, Masaya ^a   Tamamura, Toshiaki ^a   Kodama, Satoshi ^b   Furuta, Tomofumi ^b   Ando, Hiroaki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; ASPECT RATIO; CRYSTAL SYMMETRY; CRYSTALS; LATTICE CONSTANTS; LIGHT REFLECTION; PHOTOLUMINESCENCE; PHOTONS; PLASMAS; REACTIVE ION ETCHING; SILICA;

PHOTONIC CRYSTALS; WAFER BONDING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034316571     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6259     Document Type: Article

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