Low-temperature dry etching of GaAs and AlGaAs using 92-MHz anode-coupled chlorine reactive ion etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7650-7654

  Saitoh, Tadashi ^a   Sogawa, Tetsuomi ^a   Kanbe, Hiroshi ^a,b  

^a NTT Basic Research Laboratories   (Japan)

^b KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Chlorine; Damage; Etching; GaAs; Low temperature; Plasma; RIE; VHF

Indexed keywords

ANODES; CHLORINE; EXCITONS; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR PLASMAS; STOICHIOMETRY;

EXCITON PEAK INTENSITY;

NANOTECHNOLOGY;

EID: 0031342158     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7650     Document Type: Article

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