Layered-oxide-isolation (LOXI) metal-semiconductor field effect transistor (MESFET) for low parasitic source-drain capacitance

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 SUPPL. B, 1998, Pages

  Kodama, Satoshi ^a   Furuta, Tomofumi ^a   Kanda, Atsushi ^a   Muraguchi, Masahiro ^a   Ito, Hiroshi ^a   Ishibashi, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

CDS; GaAs; Layered oxide isolation (LOXI); MESFET; Semiconductor on insulator; Wafer bonding

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY; FABRICATION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMODYNAMIC STABILITY;

LOW-TEMPERATURE WAFER-BONDING TECHNIQUE;

MESFET DEVICES;

EID: 0032000079     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.L209     Document Type: Article

References (14)

1. M. Konagai, M. Suimoto and K. Takahashi: J. Cryst. Growth 45 (1978) 277.
2. E. Yablonovitch, T. Gmitter, J. P. Harbison and R. Bhat: Appl, Phys. Lett. 51 (1987) 2222.
3. D.M. Shah, W. K. Chan, T. J. Gmitter, L. T. Florez, H. Schumacher and B. P. Van der Gaag: Electron. Lett. 26 (1990) 1865.
4. J. C. Fan, C. P. Lee, J. A. Hwang and J. H. Hwang: IEEE Electron Device Lett. EDL-16 (1995) 393.
5. P. Parikh, P. Chavarkar and U. Mishra: Proc. of 1996 54th Annual Device Research Conf. Digest, 1996 (IEEE, Piscataway, 1996) IEEE Catalog #96TH8193, p. 134.
6. J. B. Lasky: Appl. Phys. Lett. 48 (1986) 78.
7. H. Wada, Y. Ogawa and T. Kamijoh: Appl. Phys. Lett. 62 (1993) 738.
8. K. Burkart and M. Wintzer: U.S. Patent no, 4,247,034 dated Jan. 27, 1981; see through that J. Haisma, G. A. C. Spierings, U. K. P. Biermann and J. A. Pals: Jpn. J. Appl. Phys. 28 (1989) 1426.
9. K. Burkart and M. Wintzer: U.S. Patent no, 4,247,034 dated Jan. 27, 1981; see through that J. Haisma, G. A. C. Spierings, U. K. P. Biermann and J. A. Pals: Jpn. J. Appl. Phys. 28 (1989) 1426.
10. U. Bhattacharya, M. J. Mondry, G. Hurz, I. Tan, R. Pullela, M. Reddy, J. Guthrie, M. J. W. Rodwell and J. E. Bowers: Proc. Ultrafast Electronics & Optelectronics, 1995 (Optical Society of America, Washinton DC, 1995) 1995 OSA Technical Digest Series, Vol. 13, p. 102.
11. B. Agarwal, M. Mensa, R. Pullela, Q. Lee, U. Bhattacharya, L. Samoska, J. Guthrie and M. J. W. Rodwell: IEEE Electron Device Lett. EDL-18 (1997) 328.
12. H. J. Quenzer and W. Benecke: Proc. 1st. Int. Symp. Semiconductor Wafer Bonding: Science, Technology, and Applications, 1992, eds. U. Gösele et al. (Electrochemical Society, Pennington, 1992) Proc. Vol. 92-7, p. 92.
13. K. Yamazaki, N. Kato and Y. Matsuoka: GaAs Integrated Circuits, ed. J. Mun (BSP Professional Books, London, 1988) Chap. 3, p. 171.
14. Y. Matsuoka, K. Ohwada and M. Hirayama: IEEE Trans. Electron Devices ED-31 (1984) 1062.