Fabrication of nanometer-order dot patterns by lift-off using a fullerene-incorporated bilayer resist system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7202-7204

  Ishii, Tetsuyoshi ^a   Tanaka, Hirotaka ^a   Kuramochi, Eiichi ^a   Tamamura, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Electron beam lithography; Fullerene; Lift off; Nanocomposite; Resist

Indexed keywords

EID: 0000979602     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.7202     Document Type: Article

References (8)

1. E. Kuramochi, J. Temmyo and T. Tamamura: Appl. Phys. Lett. 71 (1997) 1655.
2. S. Y. Chou, P. R. Krass and P. J. Renstrom: Appl. Phys. Lett. 67 (19995) 3114.
3. W. Chen and H. Ahmed: Appl. Phys. Lett. 63 (1993) 1116.
4. J. Fujita, Y. Ohnishi, Y. Ochiai, E. Nomura and S. Matsui: J. Vac. Sci. Technol. B 15 (1997) 2570.
5. T. Ishii, H. Nozawa and T. Tamamura: Appl. Phys. Lett. 70 (1997) 1110.
6. T. Ishii, H. Nozawa, T. Tamamura and A. Ozawa: J. Vac. Sci. Technol. B 14 (1997) 4272.
7. T. Shibata, T. Ishii, H. Nozawa and T. Tamamura: Jpn. J. Appl. Phys. 36 (1997) 7642.
8. S. W. Pang, T. Tamamura, M. Naka, A. Ozawa and H. Masuda: Dig. Microprocesses and Nanotechnology'97, Nagoya, 1997, p. 14.