Focused ion beam patterning of III-V crystals at low temperature: A method for improving the ion-induced defect localization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3162-3167

  Schneider, M ^a   Gierak, J ^a   Marzin, J Y ^a   Gayral, B ^b   Gerard J M ^b  

^a CNRS   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; ION BOMBARDMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ION BEAM IRRADIATION;

HETEROJUNCTIONS;

EID: 0034315949     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1328054     Document Type: Article

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