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Volumn 30, Issue 1-4, 1996, Pages 253-256
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3D defect distribution induced by focused ion beam irradiation at variable temperatures in a GaAs/GaA1As multi quantum well structure
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Author keywords
[No Author keywords available]
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Indexed keywords
ION BEAMS;
ION BOMBARDMENT;
IRRADIATION;
OPTICAL VARIABLES MEASUREMENT;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SENSORS;
TEMPERATURE;
THREE DIMENSIONAL;
GALLIUM ALUMINUM ARSENIDE;
ION BEAM IRRADIATION;
LIQUID NITROGEN TEMPERATURE;
MULTIQUANTUM WELL STRUCTURE;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0040156021
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/0167-9317(95)00239-1 Document Type: Article |
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Times cited : (11)
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References (7)
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