In situ scanning tunneling microscope studies of high-energy, focused ion implantation of Ga into GaAs: Direct observation of ion beam profiles

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2570-2573

  Jones, G A C ^a   Rose, P D ^a   Brown, S ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343422320     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590212     Document Type: Article

References (8)

1. Y. Hirayama and H. Okamoto, J. Vac. Sci. Technol. B 6, 1019 (1988).
2. E. H. Linfield, G. A. C. Jones, D. A. Ritchie, A. R. Hamilton, and N. Iredale, J. Cryst. Growth 127, 41 (1993).
3. N. Iredale, E. H. Linfield, P. D. Rose, D. A. Ritchie, M. Pepper, and G. A. C. Jones, Semicond. Sci. Technol. 12, 137 (1997).
4. G. Ben Assayag, C. Vieu, J. Gierak, P. Sudraud, and A. Corbin, J. Vac. Sci. Technol. B 11, 2420 (1993).
5. T. Bever, G. Jäger-Waldau, M. Eckberg, E. Heyen, H. Lage, A. Wieck, and K. Ploog, J. Appl. Phys. 72, 1858 (1992).
6. T. Yamamoto, J. Janagisawa, K. Gamo, S. Takaoka, and K. Murase, Jpn. J. Appl. Phys., Part 1 32, 6268 (1993).
7. S. J. Brown, P. D. Rose, E. H. Linfield, D. A. Ritchie, V. Drouot, and G. A. C. Jones, J. Cryst. Growth 175/176, 346 (1997).
8. G. Binning, K. H. Frank, H. Fuchs, N. Garcia, B. Reihl, H. Rohrer, F. Salvar, and A. R. Williams, Phys. Rev. Lett. 55, 991 (1985).