Formation of unintentional dots in small Si nanostructures

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 413-417

  Rokhinson, L P ^a   Guo, L J ^a   Chou, S Y ^a   Tsui, D C ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

CHARGE TRANSPORT; GATE OXIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034315207     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0942     Document Type: Article

References (13)

1. Hiramoto T., Ishikuro H., Fujii T., Hashiguchi G., Ikoma T. Japan. J. Appl. Phys. 36:1997;4139.
2. Takahashi Y., Nagase M., Namatsu H., Kurihara K., Iwdate K., Nakajima Y., Horiguchi S., Murase K., Tabe M. Electron. Lett. 31:1995;136.
3. Zhuang L., Guo L., Chou S. Y. Appl. Phys. Lett. 72:1998;1205.
4. Kane B. E. Nature. 393:1998;133.
5. L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui.
6. Smith R. A., Ahmed H. Appl. Phys. Lett. 71:1997;3838.
7. Ishikuro H., Fujii T., Saraya T., Hashiguchi G., Hiramoto T., Ikoma T. Appl. Phys. Lett. 68:1996;3585.
8. Ishikuro H., Hiramoto T. Appl. Phys. Lett. 74:1999;1126.
9. Sanquer M., Specht M., Ghenim L., Deleonibus S., Guegan G. Phys. Rev. B61:2000;7249.
10. Tilke A., Blick R. H., Lorenz H., Kotthaus J. P., Wharam D. A. Appl. Phys. Lett. 75:1999;3704.
11. Rokhinson L. P., Guo L. J., Chou S. Y., Tsui D. C. Appl. Phys. Lett. 76:2000;1591.
12. Leobandung E., Guo L., Wang Y., Chou S. Y. J. Vac. Sci. Technol. 13:1995;2865.
13. Ruzin I. M., Chandrasekhar V., Levin E. I., Glazman L. I. Phys. Rev. B45:1992;13469.