Room temperature Coulomb blockade and low temperature hopping transport in a multiple-dot-channel metal-oxide-semiconductor field-effect-transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 SUPPL. B, 1997, Pages 4139-4142

  Hiramoto, Toshiro ^a,b   Ishikuro, Hiroki ^a   Fujii, Tomoyuki ^a   Hashiguchi, Gen ^a,c   Ikoma, Toshiaki ^a,d  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NIPPON STEEL CORPORATION   (Japan)

^d Texas Instruments Japan Ltd   (Japan)

Author keywords

Coulomb blockade; Coupled quantum dots; Hopping conduction; MOSFET; Resonant tunneling; Single electron tunneling

Indexed keywords

EID: 0009362161     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4139     Document Type: Article

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