In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si (001) heterostructures

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 80, Issue 9, 2000, Pages 1559-2200

  Stachf, E A ^a   Hull, R ^b   Tromp, R M ^c   Rossi, F M ^c   Reuter, M C ^c   Bean, J C ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of Virginia   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRESSES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; VECTORS;

BURGERS VECTORS; EPILAYER THICKNESS; IN SITU TRANSMISSION ELECTRON MICROSCOPY; THREADING DISLOCATIONS;

DISLOCATIONS (CRYSTALS);

EID: 0034286599     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610008212156     Document Type: Article

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