Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 μm) GaAs-based quantum dot lasers

Journal of Electronic Materials

Volumn 28, Issue 5, 1999, Pages 532-536

  Huffaker, D L ^a   Zou, Z Z ^a   Park, G ^a   Shchekin, O B ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; DENSITY (SPECIFIC GRAVITY); DEPOSITION; ELECTROLUMINESCENCE; GROUND STATE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SPONTANEOUS EMISSION; TEMPERATURE;

GROUND STATE EMISSION; ULTRALOW THRESHOLD CURRENT DENSITY; WAVELENGTH;

SEMICONDUCTOR LASERS;

EID: 0032666640     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0107-x     Document Type: Article

References (9)

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