Experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface

Journal of Physics Condensed Matter

Volumn 12, Issue 35, 2000, Pages 7655-7670

  Bowler, D R ^a,d   Owen, J H G ^b,d   Goringe, C M ^d   Miki, K ^c,d   Briggs, G A D ^d  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b Hughes Aircraft Co   (United States)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; DIFFUSION; DIMERS; GASES; GROWTH KINETICS; MOLECULAR DYNAMICS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

GAS SOURCE GROWTH; HOT SCANNING TUNNELING MICROSCOPY; SEMI EMPIRICAL TIGHT BINDING CODE;

HYDROGEN;

EID: 0034273165     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/35/301     Document Type: Article

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