Fabrication of YMnO3 thin films on Si substrates by a pulsed laser deposition method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 SUPPL. B, 1997, Pages 5921-5924

  Yoshimura, Takeshi ^a   Fujimura, Norifumi ^a   Aoki, Nobuaki ^a   Hokayama, Kouzo ^a   Tsukui, Shigeki ^a   Kawabata, Keisuke ^a   Eto, Taichiro ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Ferroelectric; MFS (metal ferroelectric semiconductor); Nonvolatile ferroelectric memory; Pulsed laser deposition (PLD); Si substrate; Y2O3; YMnO3

Indexed keywords

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; HYSTERESIS; MESFET DEVICES; POLARIZATION; PULSED LASER APPLICATIONS; SILICON; SUBSTRATES; YTTRIUM COMPOUNDS;

METAL FERROELECTRIC SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MFSFET); NONVOLATILE FERROELECTRIC MEMORY; PULSED LASER DEPOSITION (PLD);

FERROELECTRIC MATERIALS;

EID: 0031222994     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5921     Document Type: Article

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