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Volumn 35, Issue 9 SUPPL. B, 1996, Pages 4987-4990

Preparation and characterization of PZT thin films on CeO2(111)/Si(111) structures

Author keywords

CeO2; Ferroelectric film; Metal ferroelectric semiconductor (MFS) FET; PbZrxTi1 xO3 (PZT); Si

Indexed keywords

FERROELECTRIC THIN FILM; METAL-FERROELECTRIC-SEMICONDUCTOR;

CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; ELECTRON BEAMS; EXPERIMENTS; FERROELECTRIC MATERIALS; QUALITY CONTROL;

THIN FILMS;

EID: 0030235414 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.4987 Document Type: Article

Times cited : (44)

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