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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 4016-4020

Crystal and electrical characterizations of oriented yttria-stabilized zirconia buffer layer for the metal/ferroelectric/insulator/semiconductor field-effect transistor

(7) Hirai, Tadahiko b Teramoto, Kazuhiro a Nagashima, Kazuhito a Koike, Hiroshi a Matsuno, Shinya b Tanimoto, Satoshi c Tarui, Yasuo a

a WASEDA UNIVERSITY (Japan)

b ASAHI CHEMICAL INDUSTRY CO (Japan)

c NISSAN MOTOR CO (Japan)

Author keywords

CVD; Ferroelectric thin film; MFS FET; PbTiO3 thin film; Perovskite; Vacuum evaporation

Indexed keywords

CRYSTALS; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; EXPERIMENTS; FERROELECTRICITY; PEROVSKITE; THIN FILMS; VACUUM APPLICATIONS; X RAY DIFFRACTION;

FERROELECTRIC THIN FILM; VACUUM EVAPORATION;

FIELD EFFECT TRANSISTORS;

EID: 0030193758 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.4016 Document Type: Article

Times cited : (44)

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