The influence of isovalent doping on diffusion of interstitial oxygen in silicon

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1773-1776

  Khirunenko, L I ^a   Pomozov, Yu V ^a   Shakhovtsov, V I ^a   Shumov, V V ^a  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

Elastic continuum; Elastic stresses; Isovalent impurities; Potential barrier height; Silicon

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL IMPURITIES; DEFORMATION; DIFFUSION IN SOLIDS; OXYGEN; RESIDUAL STRESSES; SEMICONDUCTOR DOPING;

ELASTIC STRESSES;

SEMICONDUCTING SILICON;

EID: 0031360194     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1773     Document Type: Article

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