Micromachined microwave planar spiral inductors and transformers

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 8, 2000, Pages 1326-1335

  Ribas, Renato P ^a   Lescot, Jérome ^b   Leclercq, Jean Louis ^c   Karam, Jean Michel ^a   Ndagijimana, Fabien ^b  

^a TIMA LABORATORY   (France)

^b Laboratoire d'Electromagnétisme Microondes et Optoélectroniques   (France)

^c Simplex Solutions Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC INDUCTORS; ELECTRIC TRANSFORMERS; ETCHING; FINITE ELEMENT METHOD; HIGH ELECTRON MOBILITY TRANSISTORS; MICROMACHINING; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE;

FRINGING PARASITIC CAPACITANCE; MICROMACHINED DEVICES; PLANAR SPIRAL INDUCTORS; PLANAR TRANSFORMER;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0034248970     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.859477     Document Type: Article

References (25)

1. L.M. Burns, "Integrated circuit technology options for RFIC's - present status and future directions," IEEE J. Solid-State Circuits, vol. 33, pp. 387-399, Mar. 1998.
2. J.N. Burghartz, M. Soyuer, and K. A. Jenkins, "Microwave inductors and capacitors in standard multilevel interconnect silicon technology," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 100-104, Jan. 1996.
3. A.C. Reyes, S. M. El-Ghazaly, S. J. Dorn, M. Dydyk, D. K. Schroder, and H. Patterson, "Coplanar waveguides and microwave inductors on silicon substrates," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2016-2022, Sept. 1995.
4. K.B. Ashby, I. A. Koullias, W. C. Finley, J. J. Bastek, and S. Moinian, "High Q inductors for wireless applications in a complementary silicon bipolar process," IEEE J. Solid-State Circuits, vol. 31, pp. 4-9, Jan. 1996.
5. M. Park, S. Lee, H.K. Yu, J. G. Koo, and K. S. Nam, "High Q CMOS-compatible microwave inductors using double-metal interconnection silicon technology," IEEE Microwave Guided Wave Lett., vol. 7, pp. 45-47, Feb. 1997.
6. J.N. Burghartz, D. C. Edelstein, K. A. Jenkins, and Y. H. Kwark, "Spiral inductor and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1961-1968, Oct. 1997.
7. C.-Y Chi, and G.M. Rebeiz, "Planar microwave and millimeter-wave lumped elements and coupled-line filters using micro-machining techniques," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 730-738, Apr. 1995.
8. T.M. Weller, K. J. Herrick, and L. P. B. Katehi, "Quasi-static design technique for mm-wave micromachined filters with lumped elements and series stubs," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 931-938, June 1997.
9. J.Y.-C. Chang, A. A. Abidi, and M. Gaitan, "Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier," IEEE Electron Device Lett., vol. 14, pp. 246-248, May 1993.
10. V. Milanovic, M. Gaitan, E.D. Bowen, and M. E. Zaghloul, "Micro-machined microwave transmission lines in CMOS technology," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 630-635, May 1997.
11. J.M. López-Villegas, J. Samitier, J. Bausells, A. Merlos, C. Cané, and R. Knöchel, "Study of integrated RF passive components performed using CMOS and Si micromachining technologies," J. Micromech. Microeng., vol. 7, pp. 162-164, 1997.
12. S.M. Sze, Semiconductor Sensors. New York: Wiley, 1994.
13. R.P. Ribas, N. Bennouri, J. M. Karam, and B. Courtois, "GaAs MEMS design using 0.2 μm HEMT MMIC technology," in IEEE GaAs IC Tech. Symp. Dig., Oct. 1997, pp. 127-130.
14. E. Frlan, S. Meszaros, M. Cuhaci, and J.S. Wight, "Computer aided design of square spiral transformers and inductors," in IEEE MTT-S Int. Microwave Symp. Dig., Long Beach, CA, June 1989, pp. 661-664.
15. G.G. Rabjohn, "Monolithic microwave transformers," M. Eng. thesis, Carleton Univ., Ottawa, Ont., Canada, 1991.
16. "D02AH Design Manual," Philips Microwave, Limeil, France, Doc. PML-G-SC-0008-E / V2.0, Jan. 1997.
17. R.P. Ribas, J. L. Leclercq, J. M. Karam, B. Courtois, and P. Viktorovitch, "Bulk micromachining characterization of 0.2 μm HEMT MMIC technology for GaAs MEMS design,"Mater. Sci. Eng., no. 1-3, pp. 267-273, Feb. 1998.
18. W.R. Eisenstadt and Y. Eo, "S-parameter-based IC interconnect transmission line characterization," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 15, no. 4, Aug. 1992.
19. E. Pettenpaul, H. Kaputsa, A. Weisgerber, H. Mampe, J. Luginsland, and I. Wolff, "CAD models of lumped elements on GaAs up to 18 GHz," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 294-304, Feb. 1988.
20. F.W. Grover, Inductance Calculations. New York: Van Nostrand, 1946.
21. D. Krafesik and D. Dawson, "A closed-form expression for representing the distributed nature of the spiral inductor," in IEEE MTT-S Monolithic Circuits Symp. Dig., Baltimore, MD, 1986, pp. 87-91.
22. H.M. Greenhouse, "Design of planar rectangular microelectronic inductors," IEEE Trans. Parts, Mater., Packag., vol. PMP-10, pp. 101-109, June 1974.
23. B. Courtois, "Access to microsystem technology: The MPC services solution," Microelectron.J., vol. 28, no. 4, pp. 407-417, May 1997.
24. P.J. Van Wijnen, H. R. Claessen, and E. A. Wolshereimer, "A new straight forward calibration and correction procedure for on-wafer high frequency 5-parameter measurements (45 MHz-18 GHz)," in BCTM Dig., 1987, pp. 70-73.
25. C. Song, "Commercial vision of siliconed inertial sensors," in Proc. Int. Solid-State Sens. Actuators - Transducers '97 Conf., Chicago, IL, pp. 839-842.