Secondary ion mass spectrometry and X-ray photoelectron spectroscopy correlation study of nitrided gate oxide

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1056-1060

  Bradbury, C A ^a   Blackmer, C ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM; DIELECTRIC FILMS; GATES (TRANSISTOR); ION BOMBARDMENT; ION SOURCES; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SILICA; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE OXIDES;

MOS DEVICES;

EID: 0034227572     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582299     Document Type: Article

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