Formation of ultrathin oxynitride layers on Si(100) by low-temperature electron cyclotron resonance N2O plasma oxynitridation process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2159-2164

  Chakraborty, Sahana ^a   Yoshida, Toshiyuki ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a   Sakai, Takamasa ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b DAINIPPON SCREEN MFG CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007087182     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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