Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 9, 1998, Pages 1680-1688

  Higashi, Toshio ^a,b,c,d   Yamamoto, Tsuyoshi ^a   Ogita, Shouichi ^a,d   Kobayashi, Masahiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d IEEE   (Japan)

Author keywords

Laser wavelength stability; Optical communication; Quantum well laser; Semiconductor laser; Temperature

Indexed keywords

ENERGY GAP; LEAKAGE CURRENTS; OPTICAL COMMUNICATION; OSCILLATIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; THERMOANALYSIS;

BULK LASERS; LASER WAVELENGTH STABILITY; OSCILLATION WAVELENGTH; STRAINED MULTIPLE QUANTUM WELL (MQW) SEMICONDUCTOR LASERS;

QUANTUM WELL LASERS;

EID: 0032162883     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.709584     Document Type: Article

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