Initial stage of SiC film growth on Si(111)7×7 and Si(100)2×1 surfaces using C60 as a precursor studied by STM and HRTEM

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 265-268

  Suto, S ^a   Hu, C W ^b   Sato, F ^a   Tanaka, M ^a   Kasukabe, Y ^a   Kasuya, A ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

SEMICONDUCTING FILMS;

EID: 0034225332     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00820-8     Document Type: Article

References (10)

1. Hamza A.V., Balooch M., Moalen M. Surf. Sci. 317:1994;L1129.
2. Chen D., Workman R., Sarid D. Surf. Sci. 344:1995;23.
3. Suto S., Kasuya A., Hu C.-W., et al. Mater. Sci. Eng. A217/218:1996;34.
4. Hu C.-W., Kasuya A., Suto S., Wawro A., Nishina Y. Appl. Phys. Lett. 68:1996;1253.
5. Hu C.-W., Kasuya A., Suto S., Wawro A., Nishina Y. J. Vac. Sci. Technol. B24:1996;938.
6. Pascual J.I., Gómez-Herrero J., Baró A.M. Surf. Sci. 1998;L267.
7. Sakamoto K., Harada M., Ashima H., et al. J. Electron. Spectrosc. Relat. Phnom. 88-91:1998;897.
8. Cepek C., Schiavuta P., Sancrotti M., Pedio M. Phys. Rev. B60:1999;2068.
9. Sakamoto K., Kondo D., Ushimi Y., et al. Phys. Rev. B60:1999;2579.
10. Kitabatake M., Greene J.E. Jpn. J. Appl. Phys. 35:1996;5261.