SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor

Journal of Electron Spectroscopy and Related Phenomena

Volumn 88-91, Issue , 1998, Pages 897-903

  Sakamoto, K ^a   Harada, M ^a   Ashima, H ^a   Suzuki, T ^a   Wakita, T ^a   Kasuya, A ^a   Suto, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Charge transfer; Electron energy loss spectroscopy; Fullerenes; Silicon; Silicon carbide; Surface phonon

Indexed keywords

EID: 17744418053     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0368-2048(97)00210-7     Document Type: Article

References (15)

1. M. Balooch, A.V. Hamza, Appl. Phys. Lett. 63 (1993) 150.
2. D. Chen, D. Sarid, Phys. Rev. B49 (1994) 612.
3. C.-W. Hu, A. Kasuya, S. Suto, A. Wawro, Y. Nishina, Appl. Phys. Lett. 68 (1996) 1253.
4. D. Chen, D. Sarid, Surf. Sci. 329 (1995) 206.
5. X.-D. Wang, T. Hashizume, H. Shinohara, Y. Saito, Y. Nishina, T. Sakurai, Phys. Rev. B47 (1993) 15923.
6. A.V. Hamza, M. Balooch, M. Moalen, Surf. Sci. 317 (1994) L1129.
7. A. Ishizuka, Y. Shiraki, J. Electrochem. Soc. 33 (1986) 666.
8. S. Suto, K. Sakamoto, T. Wakita, C.-W. Hu, A. Kasuya, Phys.Rev. B56 (1997) 439.
9. M.R.C. Hunt, S. Modesti, R. Rudolf, R.E. Palmer, Phys. Rev. B51 (1995) 10039.
10. S. Suto, A. Kasuya, C.-W. Hu, A. Wawro, K. Sakamoto, T. Wakita, T. Goto, Y. Nishina, Materials Sci. Engineering A217-218 (1996) 24.
11. G.B. Adams, J.B. Page, O.F. Sankey, O. Keefe, Phys. Rev. B50 (1994) 17471.
12. S. Suto, A. Kasuya, C.-W. Hu, A. Wawro, T. Goto, Y. Nishina, Surf. Rev. Lett. 3 (1996) 927.
13. M. Dayan, Surf. Sci. Lett. 149 (1985) L33.
14. H. Nienhaus, T.U. Kampen, W. Mnch, Surf. Sci. 324 (1995) L328.
15. K. Sakamoto, T. Suzuki, T. Wakita, S. Suto, C.-W. Hu, T. Ochiai, A. Kasuya, Appl. Surf. Sci., in press.