Level-resonance transition of deep states produced by nitrogen vacancies in nitride semiconductors

Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 157-161

  Yamaguchi, E ^a   Shiraishi, K ^a   Kageshima, H ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033249286     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<157::AID-PSSB157>3.0.CO;2-S     Document Type: Article

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