Evidence on the formation of a heavily Ge-doped layer in Pd/Ge-based ohmic contact to pseudomorphic high electron mobility transistor

Applied Physics Letters

Volumn 73, Issue 22, 1998, Pages 3247-3249

  Lee, Jong Lam ^a   Kim, Yi Tae ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342398375     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122733     Document Type: Article

References (8)

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