Wafer bonding: A flexible approach to materials integration

Electrochemical Society Interface

Volumn 9, Issue 2, 2000, Pages 20-25

  Gosele U ^a,b,d   Alexe, M ^a,c,d  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b DUKE UNIVERSITY   (United States)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ANNEALING; BONDING; HYDROGEN; PLASTIC DEFORMATION; SEMICONDUCTING GALLIUM ARSENIDE; SILICON ON INSULATOR TECHNOLOGY; SURFACE TOPOGRAPHY; THIN FILMS; VACUUM TECHNOLOGY; VAN DER WAALS FORCES;

BOND ENERGY; HYDROPHILIC SURFACES; HYDROPHOBIC SURFACES; VACUUM BONDING;

SILICON WAFERS;

EID: 0034206507     PISSN: 10648208     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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