Structural evolution and valence electron-state change during ultra thin silicon-oxide growth

Applied Surface Science

Volumn 159, Issue , 2000, Pages 89-97

  Shimizu, A ^a   Abe, S ^a   Nakayama, H ^a   Nishino, T ^a   Iida, S ^b  

^a KOBE UNIVERSITY   (Japan)

^b OSAKA SANGYO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICA; ULTRATHIN FILMS;

AUGER VALENCE ELECTRON SPECTROSCOPY (AVES); VALENCE ELECTRON STATES;

SEMICONDUCTING FILMS;

EID: 0034205146     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00148-3     Document Type: Article

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