Molecular beam epitaxial growth of bulk AlAs0.16Sb0.84 and AlAs0.16Sb0.84/InAs superlattices on lattice-matched InAs substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3426-3428

  Németh, Štefan ^a,b   Grietens, Bob ^a   Bender, Hugo ^a   Borghs, Gustaaf ^a  

^a IMEC   (Belgium)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

AlAsSb; MBE; RHEED; Superlattices

Indexed keywords

CRYSTALLINITY; INDIUM ARSENIDE;

MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031164338     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3426     Document Type: Article

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