Type-I and Type-II interband transitions in CdSe/ZnTe quantum well structures

Solid State Communications

Volumn 108, Issue 4, 1998, Pages 205-209

  Haetty, J ^a   Lee, E H ^a   Luo, H ^a   Petrou, A ^a   Warnock, J ^b  

^a UNIVERSITY AT BUFFALO   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

A. quantum wells; A. semiconductors; D. optical properties; D. recombination and trapping; E. luminescence

Indexed keywords

BAND STRUCTURE; CALCULATIONS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

COULOMB INTERACTION; INTERBAND TRANSITION;

ELECTRON TRANSITIONS;

EID: 0032500275     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00349-4     Document Type: Article

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