Molecular beam epitaxial growth of monolithic 1.55 μm vertical cavity surface emitting lasers with AlGaAsSb/AlAsSb Bragg mirrors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1601-1604

  Almuneau, G ^a   Hall, E ^a   Nakagawa, S ^a   Kim, J K ^a   Lofgreen, D ^a   Sjolund O ^a   Luo, C ^a   Clarke, D R ^a   English, J H ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MIRRORS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

ALUMINUM ARSENIC ANTIMONIDE; ALUMINUM GALLIUM ARSENIC ANTIMONIDE; DISTRIBUTED BRAGG REFLECTORS; LONG WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASERS (LW-VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034187342     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591436     Document Type: Article

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