AlAsSb-based distributed Bragg reflectors using InAlGaAs as high-index layer

Electronics Letters

Volumn 35, Issue 5, 1999, Pages 425-427

  Hall, E ^a   Kroemer, H ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

DISTRIBUTED BRAGG REFLECTORS; LONG WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASERS; VALENCE BAND DISCONTINUITY;

MIRRORS;

EID: 0032633453     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990293     Document Type: Article

References (7)

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2. UNGARO, G., HARMAND, J.C., SAGNES, I., SERMAGH, B., DEBRAY, J.P., MERIADEC, C., RIVERA, T., OUDAR, J.L., and RAJ, R.: 'Room-temperature continuous-wave operation VCSEL at 1.48μm with Sb-based Bragg reflector', Electron. Lett., 1998, 34, pp. 402-442
3. BLUM, O., HAFICH, M.J., KLEM, J.F., LEAR, K.L., and CHU, S.N.G.: 'Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers', Appl. Phys. Lett., 1995, 67, pp. 3233-3235
4. MONDRY, M.J., BABIC, D.I., BOWERS, J.E., and COLDREN, L.A.: 'Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications', IEEE Photonics Technol. Lett., 1992, 4, pp. 627-630
5. HALL, E., KROEMER, H., and COLDREN, L.A.: submitted to J. Cryst. Growth
6. BLUM, O., ERITZ, I.J., DAWSON, L.R., HOWARD, A.J., HEADLEY, T.J., KLEM, J.F., and DRUMMOND, T.J.: 'Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates', Appl. Phys. Lett., 1995, 66, pp. 329-331
7. BABlC, D.I., PIPREK, J., STREUBEL, K , MIRIN, R.P., MARGALIT, N.M., MARS, D.E., BOWERS, I.E., and HU, E.L.: 'Design and analysis of double-fused 1.55μm vertical-cavity lasers', IEEE J. Quantum Electron., 1997, 33, pp. 1369-1383