Room-temperature, electrically-pumped multiple-active-region VCSELs with high differential efficiency at 1.55 μm

Electronics Letters

Volumn 35, Issue 13, 1999, Pages 1084-1085

  Kim, J K ^a   Hall, E ^a   Sjolund O ^a   Almuneau, G ^a   Coldren, L A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CURRENT DENSITY; EPITAXIAL GROWTH; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

DIFFERENTIAL EFFICIENCY; ESAKI JUNCTIONS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0032631155     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990760     Document Type: Article

References (7)

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2. 0 of 132K at room temperature', Electron. Lett., 1998, 34, (20), pp. 1947-1949
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4. BOUCART, J., STARCK, C., PLAIS, A., DEROUM, E., FORTIN, C., GABORIT, F., PINQUIER, A., GOEDSTEIN, L., CARPENTIER, D., and JACQUET, J.: 'RT pulsed operation of metamorphic VCSEL at 1.55μm', Electron. Lett., 1998, 34, (22), pp. 2133-2135
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6. KIM, J.K., HALL, E., SJÖLUND, O., and COLDREN, L.A.: 'Epitaxially-stacked multiple-active-region 1.55μm lasers for increased differential efficiency', Appl. Phys. Lett., 1999, 74, (22), pp. 3251-3253
7. STREUBEL, K., HAMMAR, M., SALOMONSSON, F., BENTEL, J., RAPP, S., and MOGG, S.: 'Long-wavelength vertical-cavity lasers'. Photonics West, San Jose, USA, 23-29 January 1999, Invited Paper