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Volumn 18, Issue 2, 2000, Pages 757-760
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Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters
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Author keywords
[No Author keywords available]
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
COMPUTER SIMULATION;
ELECTRIC RESISTANCE;
GATES (TRANSISTOR);
INTEGRATED CIRCUIT LAYOUT;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR JUNCTIONS;
THERMAL NOISE;
TRANSCONDUCTANCE;
CHANNEL THERMAL NOISE;
DRAIN RESISTANCE;
EQUIVALENT NOISE RESISTANCE;
RADIO FREQUENCY NOISE PARAMETER MEASUREMENT;
SCATTERING PARAMETER MEASUREMENT;
SOURCE RESISTANCE;
MOSFET DEVICES;
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EID: 0034155692
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.582174 Document Type: Article |
Times cited : (11)
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References (10)
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