Morphology of Porous n-Type Silicon Obtained by Photoelectrochemical Etching: I. Correlations with Material and Etching Parameters

Journal of the Electrochemical Society

Volumn 141, Issue 4, 1994, Pages 958-967

  Levy Clement, Claude ^a   Lagoubi, Abdeighani ^a   Tomkiewicz, Micha ^b  

^a Laboratoire de Physique des Solides et de Cristallogen?se (LPSC)   (France)

^b CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

crystal orientation; etching; materials preparation; photoelectrochemistry; porosity; porous semiconductors; silicon; solid structure

Indexed keywords

CHARACTERIZATION; CRYSTAL ORIENTATION; DENSITY (SPECIFIC GRAVITY); DOPING (ADDITIVES); ELECTROCHEMISTRY; ETCHING; MORPHOLOGY; PHOTOCHEMICAL REACTIONS; POROUS MATERIALS; SURFACE MEASUREMENT; SURFACE PHENOMENA; SURFACE TREATMENT;

DOPING DENSITY; ETCH CRATER; MACROPORES CHANGES; MACROPOROUS LAYER; NANOPOROUS MATERIALS; PHOTOELECTROCHEMICAL ETCHING; PORES; POROUS N-TYPE SILICON; SURFACE ROUGHNESS; THICKNESS;

SEMICONDUCTING SILICON;

EID: 0028420062     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2054865     Document Type: Article

References (38)

1. M. I. J. Beale, N. G. Chew, M. J. Uren, A. G. Cullis, and J. D. Benjamin, Appl. Phys. Lett., 46, 86 (1985).
2. G. Bomchil, A. Halimaoui, and R. Herino, Microelectron. Eng., 8, 293 (1988).
3. L. T. Canham, Appl. Phys. Lett., 57, 1046 (1990).
4. A. Halimaoui, C. Oules, G. Bomchil, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, and F. Muller, Appl. Phys. Lett., 59, 304 (1991);
5. A. Bsiesy, J. C. Vial, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, A. Vasiela, A. Halimaoui, Surf. Sci., 254, 195 (1991).
6. M. S. Brandt, H. D. Fuchs, M. Stutzmann, J. Weber, and M. Cardonna, Solid State Commun., 81, 307 (1992).
7. S. M. Prokes, O. J. Glembocki, V. M. Bermudez, R. Kaplan, L. E. Friedersdorf, and P C. Searson, Phys. Rev., 1145, 13788 (1992).
8. C. Levy-Clément, A. Lagoubi, D. Ballutaud, F. Ozanam, J.-N. Chazalviel, and M. Neumann-Spallart, Appl. Surf. Sci., 65-66, 408 (1993).
9. A. Lagoubi, M. Neumann-Spallart, S. Bastide, in Proceedings of 11th European Photovoltaic Solar Energy Conference, pp. 250-253, Harwood Academic Publishers, Harwood, England (1993).
10. A. Albu Yaron, S. Bastide, J.-L. Maurice, and C. Levy-Clement, Special issue of J. Lum., Light Emission from Silicon, J. C. Vial, L. T. Canham, and W. Lang, Editors, Vol. 57, p. 67 (1993).
11. U. Galun, A. Lagoubi, R. Tenne, and C. Levy-Clement, Appl. Surf. Sci, p. 125.
12. C. Levy-Clement, A. Lagoubi, R. Tenne, and M. Neumann-Spallart, Electrochim. Acta, 37, 877 (1992) and reference therein.
13. W. Kern, RCA Rev., 39, 278 (1978).
14. V. Lehmann and H. Foll, Journal of the Electrochemical Society, 135, 2831 (1988).
15. M. J. Eddowes, J. Electroanal. Chem., 280, 297 (1990); Journal of the Electrochemical Society, 137, 3514 (1990).
16. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., p. 804, John Wiley & Sons, Inc., New York (1981).
17. A. Albu Yaron, S. Bastide, D. Bouchet, N. Brun, C. Colhex, and C. Levy-Clement, J. Physique (France), Submitted for publication.
18. B. B. Mandelbrot, in The Fractal Geometry of Nature, W. H. Freeman, New York (1983).
19. A. N. Zaikin and A. M. Zhabotinskii, Nature, 225, 535 (1970).
20. R. L. Smith and S. D. Collins, J. Appl. Phys., 71, R1-R22 (1992).
21. H. W. Pickering, Corrosion, 42, 125 (1986).
22. P. C. Searson, J. M. MacAulay, and S. M. Prokes, Journal of the Electrochemical Society, 139, 3373 (1992).
23. D. R. Turner, Journal of the Electrochemical Society, 105, 402 (1958).
24. R. Memming and G. Schwandt, Surf. Sci., 4, 109 (1966).
25. S. F. Chuang, S. D. Collins, and R. L. Smith, Appl. Phys. Lett., 55, 675 (1989).
26. P. C. Searson and X. G. Zhang, Journal of the Electrochemical Society, 137, 2539 (1990).
27. M. Matsumura and S. R. Morrison, J. Electroanal. Chem., 144, 113 (1983); J. Electroanal. Chem, 147, 157 (1983).
28. H. Gerischer, and M. Lubke, Ber. Bunsenges, Phys. Chem., 91, 934 (1987); Journal of the Electrochemical Society, 135, 2782 (1988).
29. L. M. Peter, A. M. Borazio, H. J. Lewerenz, and J. Stumper, J. Electroanal. Chem., 290, 229 (1990).
30. G. Daccord and R. Lenormand, Nature, 325, 41 (1987).
31. Y. Sawada, A. Dougherty, and J. P. Gollub, Phys. Rev. Lett., 66, 1260 (1986).
32. T. A. Witten and L. M. Sander, Phys. Rev. Lett, 47, 1400 (1981).
33. R. F. Voss and M. Tomkiewicz, Journal of the Electrochemical Society, 132, 371 (1985).
34. M. J. J. Theunissen, Journal of the Electrochemical Society, 119, 351 (1972).
35. T. Unagami, Journal of the Electrochemical Society, 127, 476 (1980).
36. V. P. Parhutik, L. K. Glinenko, and V. A. Labunov, Surf. Technol., 20, 265 (1983).
37. V. Lehmann and H. Foll, Journal of the Electrochemical Society, 137, 653 (1990). Physics of SiO2 and Its Interfaces, S. T. Pantelides, Editor, Pergamon Press, New York (1978).
38. R. L. Meek, Journal of the Electrochemical Society, 118, 437 (1971); 118, 1241 (1971); Surf. Sci., 25, 526 (1971).