Classification of the pore structure of n-type silicon and its microstructure

Journal of the Electrochemical Society

Volumn 144, Issue 9, 1997, Pages 3226-3237

  Osaka, Tetsuya ^a   Ogasawara, Kako ^a   Nakahara, Shohei ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL MICROSTRUCTURE; LUMINESCENCE; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ANODIZATION; NANOSCALE CRYSTALLINE SILICON ASPERITE; PORE STRUCTURE;

POROUS SILICON;

EID: 0031232656     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837988     Document Type: Article

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