Gas-source MBE growth of Tl-based III-V semiconductors and their Raman scattering characterization

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 547-551

  Zhou, Y K ^a   Asahi, H ^a   Ayabe, A ^a   Takenaka, K ^a   Fushida, M ^a   Asami, K ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; THALLIUM ALLOYS; X RAY CRYSTALLOGRAPHY;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); THALLIUM INDIUM GALLIUM ARSENIDE; THALLIUM INDIUM GALLIUM PHOSPHIDE;

SEMICONDUCTOR GROWTH;

EID: 0034140844     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00617-X     Document Type: Article

References (12)

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