Gas source molecular beam epitaxy growth of TlInP for new infrared optical devices

Journal of Applied Physics

Volumn 81, Issue 4, 1997, Pages 1704-1707

  Yamamoto, K ^a   Asahi, H ^a   Fushida, M ^a   Iwata, K ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000000349     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364013     Document Type: Article

References (7)

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