Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1069-1072

  Asahi, H ^a   Koh, H ^a   Takenaka, K ^a   Asami, K ^a   Oe, K ^b   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; THERMAL EFFECTS;

GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE); THALLIUM INDIUM GALLIUM ARSENIDE; THALLIUM INDIUM GALLIUM PHOSPHIDE;

SEMICONDUCTING FILMS;

EID: 0032643216     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01524-3     Document Type: Article

References (8)

1. Asahi H., Yamamoto K., Iwata K., Gonda S., Oe K. Jpn. J. Appl. Phys. 35:1996;L876.
2. Asahi H. Compound Semicond. 2:1996;34.
3. van Schilfgaarde M., Chen A.B., Krishnamurthy S., Sher A. Appl. Phys. Lett. 65:1994;2714.
4. Long D. Energy Bands in Semiconductors. 1968;Wiley, New York.
5. Yamamoto K., Asahi H., Fushida M., Iwata K., Gonda S. J. Appl. Phys. 81:1997;1704.
6. Fushida M., Asahi H., Yamamoto K., Koh H., Asami K., Gonda S., Oe K. Jpn. J. Appl. Phys. 36:1997;L665.
7. Asahi H., Fushida M., Yamamoto K., Iwata K., Koh H., Asami K., Gonda S., Oe K. J. Crystal Growth. 175/176:1997;1195.
8. Koh H., Asahi H., Fushida M., Yamamoto K., Takenaka K., Asami K., Gonda S., Oe K. J. Crystal Growth. 188:1998;107.