New semiconductors T1InGap and their gas source MBE growth

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1195-1199

  Asahi, H ^a   Fushida, M ^a   Yamamoto, K ^a   Iwata, K ^a   Koh, H ^a   Asami, K ^a   Gonda, S ^a   Oe, K ^b  

^a OSAKA UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Gas source MBE; Infrared; Mid infrared; Temperature independent band gap; Thallium alloy; TlGaP; TlInGaP; TlInP

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SURFACE TREATMENT; THALLIUM ALLOYS; X RAY DIFFRACTION ANALYSIS;

TEMPERATURE INDEPENDENT BAND GAP ENERGY; THALLIUM INDIUM GALLIUM PHOSPHIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031147615     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00936-0     Document Type: Article

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