TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6 A, 1997, Pages

  Fushida, Masahiro ^a   Asahi, Hajime ^a   Yamamoto, Kazuhiko ^a   Koh, Hideki ^a   Asami, Kumiko ^a   Gonda, Shun ichi ^a   Oe, Kunishige ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHASE COMPOSITION; PHASE SEPARATION; PHOTOCONDUCTIVITY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SUBSTRATES; THALLIUM ALLOYS; THALLIUM COMPOUNDS;

GAS SOURCE MOLECULAR BEAM EPITAXY (MBE); LATTICE MATCHING; TEMPERATURE INSENSITIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031163031     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l665     Document Type: Article

References (5)