Growth of TlInGaAs on InP by gas-source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1026-1028

  Takenaka, Keiichi ^a   Asahi, Hajime ^a   Koh, Hideki ^a   Asami, Kumiko ^a   Gonda, Shun Ichi ^a   Oe, Kunishige ^b,c  

^a OSAKA UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Gas source MBE; Long wavelength optical device; Photoluminescence; Temperature insensitive wavelength laser diode; TiInGaAs; X ray diffraction

Indexed keywords

LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

PHOTOLUMINESCENCE EMISSION; THALLIUM INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR GROWTH;

EID: 0032628280     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1026     Document Type: Article

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