Growth of novel InP-based materials by He-plasma-assisted epitaxy

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 237-241

  Pinkney, H ^a   Thompson, D A ^a   Robinson, B J ^a   Qian, L ^b   Benjamin, S D ^b   Smith, P W E ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; HALL EFFECT; HELIUM; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0034140841     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00547-3     Document Type: Article

References (9)

1. D.B. Mitchell, Ph.D. Thesis, McMaster University, 1995.
2. D.A. Thompson, D.B. Mitchell, B.J. Robinson, R.R. LaPierre, P. Mascher, Proceedings of the Ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, February 5-10, 1995, p. 769.
3. Mitchell D.B., Robinson B.J., Thompson D.A., Qian L., Benjamin S.D., Smith P.W.E. Appl. Phys. Lett. 69(4):1996;509.
4. B.J. Robinson, D.A. Thompson, O.J. Lumley, S.A. McMaster, J. Zhao, H. Pinkney, L. Qian, S.D. Benjamin, P.W.E. Smith, Proceedings of the Ninth International Conference on Indium Phosphide and Related Materials, Cape Cod, MA, 1997, p. 70.
5. Pinkney H., Thompson D.A., Robinson B.J., Mascher P., Simpson P.J., Myler U., Kang J.U., Frankel M.Y. J. Vac. Sci. Technol. A. 16(2):1998;772.
6. Kang J.U., Frankel M.Y., Esman R.D., Thompson D.A., Robinson B.J. J. Appl. Phys. 83(6):1998;3423.
7. Qian L., Benjamin S.D., Smith P.W.E., Robinson B.J., Thompson D.A. Appl. Phys. Lett. 71(11):1997;1513.
8. Qian L., Benjamin S.D., Smith P.W.E., Robinson B.J., Thompson D.A. Opt. Lett. 22:1997;108.
9. H. Pinkney, D.A. Thompson, B.J. Robinson, P.J. Simpson, U. Myler, R.W. Streater, Proceedings of the 11 International Conference on Indium Phosphide and Related Materials, Davos, Switzerland, 1999, p. 143.