Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 83, Issue 6, 1998, Pages 3423-3425

  Kang, Jin U ^a   Frankel, Michael Y ^a   Esman, Ronald D ^a   Thompson, D A ^b   Robinson, B J ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038256882     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367110     Document Type: Article

References (7)

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4. L. Qian, S. D. Benjamin, P. W. E. Smith, B. J. Robinson, and D. A. Thompson, Appl. Phys. Lett. 22, 108 (1997).
5. L. Qian, S. D. Benjamin, P. W. E. Smith, B. J. Robinson, and D. A. Thompson, Appl. Phys. Lett. 71, 1513 (1997).
6. J. Kuhl, E. O. Gobel, T. Pfeiffer, and A. Jonietz, Appl. Phys. A: Solids Surf. 34, 105 (1984).
7. E. S. Harmon, M. R. Melloch, J. M. Woodall, D. D. Nolte, N. Otsuka, and C. L. Chang, Appl. Phys. Lett. 63, 2248 (1993).