Electrical characterization of high resistivity InP and optically fast (sub-picosecond) InGaAsP grown by He-plasma-assisted epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 70-73

  Robinson, B J ^a   Thompson, D A ^a   Lumley, O J ^a   McMaster, S A ^a   Zhao, J ^a   Pinkhey, H ^a   Qian, Li ^a   Benjamin, S D ^a   Smith, P W E ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; HELIUM; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

HELIUM PLASMA ASSISTED EPITAXY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030653632     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)