Characterization of He-plasma-assisted GSMBE InGaAsP

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 143-146

  Pinkney, H ^a   Thompson, D A ^a   Robinson, B J ^a   Simpson, P J ^a   Myler, U ^a   Streater, R W ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON TRAPS; HALL EFFECT; HELIUM; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; POSITRONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TEMPERATURE MEASUREMENT;

GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE); INDIUM GALLIUM ARSENIDE PHOSPHIDE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032691942     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)