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Volumn 16, Issue 2, 1998, Pages 772-775
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Characterization of annealed high-resistivity InP grown by He-plasma-assisted epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
BERYLLIUM;
CURRENT VOLTAGE CHARACTERISTICS;
DEFECTS;
ELECTRIC RESISTANCE MEASUREMENT;
ELECTRON CYCLOTRON RESONANCE;
HELIUM;
MOLECULAR BEAM EPITAXY;
PLASMAS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
GAS SOURCE MOLECULAR BEAM EPITAXY;
POSITRON ANNIHILATION MEASUREMENT;
SHEET RESISTANCE MEASUREMENT;
TRANSIENT ELLIPSOMETRIC SURFACE PHOTOREFLECTANCE;
SEMICONDUCTING INDIUM PHOSPHIDE;
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EID: 0032028707
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.581057 Document Type: Article |
Times cited : (6)
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References (10)
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