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Volumn 16, Issue 2, 1998, Pages 772-775

Characterization of annealed high-resistivity InP grown by He-plasma-assisted epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BERYLLIUM; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; HELIUM; MOLECULAR BEAM EPITAXY; PLASMAS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

EID: 0032028707     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581057     Document Type: Article
Times cited : (6)

References (10)
  • 5
    • 3343001117 scopus 로고    scopus 로고
    • edited by D. J. Fisher, G. E. Murch, H. Neber-Aeschbacher, and F. M. Wöhlbier Trans. Tech. Publications, Switzerland
    • D. W. Lawther and P. J. Simpson, Defect and Diffusion Forum, edited by D. J. Fisher, G. E. Murch, H. Neber-Aeschbacher, and F. M. Wöhlbier (Trans. Tech. Publications, Switzerland, 1996), Vol. 138-139, p. 1-18.
    • (1996) Defect and Diffusion Forum , vol.138-139 , pp. 1-18
    • Lawther, D.W.1    Simpson, P.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.