Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope

Ultramicroscopy

Volumn 82, Issue 1-4, 2000, Pages 159-163

  Versen, M ^a   Klehn, B ^a   Kunze, U ^a   Reuter, D ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

GaAs AlGaAs; Nanometer scale fabrication technology; Quantum point contact; Single electron device

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON DEVICE MANUFACTURE; FIELD EFFECT TRANSISTORS; MICROMACHINING; NANOTECHNOLOGY; SEMICONDUCTOR QUANTUM DOTS; TRANSCONDUCTANCE;

MODULATION-DOPED FIELD EFFECT TRANSISTORS (MODFET); SINGLE-ELECTRON DEVICES;

SEMICONDUCTING GALLIUM ARSENIDE;

NANOPARTICLE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CONDUCTANCE; STRUCTURE ANALYSIS; TECHNOLOGY;

EID: 0033979008     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(99)00127-8     Document Type: Article

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