Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching

Ultramicroscopy

Volumn 82, Issue 1-4, 2000, Pages 153-157

  Skaberna, S ^a   Versen, M ^a   Klehn, B ^a   Kunze, U ^a   Reuter, D ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

GaAs AlGaAs; Nanometer scale fabrication technology; Quantum point contact

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; ETCHING; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THERMAL EFFECTS;

DYNAMIC PLOWING TECHNIQUE; GALLIUM ALUMINUM ARSENIDE; QUANTUM POINT CONTACT; WET-CHEMICAL ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

NANOPARTICLE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CONDUCTANCE; DYNAMICS; TECHNOLOGY; TEMPERATURE; VIBRATION;

EID: 0033955994     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(99)00126-6     Document Type: Article

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