Life cycle of grown-in defects in silicon as observed by IR-LST

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 7-14

  Kissinger, G ^a   Vanhellemont, J ^b  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; LASER APPLICATIONS; LIGHT SCATTERING; NUCLEATION; POINT DEFECTS; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH;

GROWN-IN DEFECTS; LASER SCATTERING TOMOGRAPHY (LST);

SILICON WAFERS;

EID: 0033907136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00637-5     Document Type: Article

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