Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

Applied Physics Letters

Volumn 72, Issue 2, 1998, Pages 223-225

  Kissinger, G ^a   Morgenstern, G ^a   Vanhellemont, J ^b   Graf D ^b   Lambert, U ^b   Richter, H ^a  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343393274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120692     Document Type: Article

References (24)

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